PSMN020-150W Ver la hoja de datos (PDF) - Philips Electronics
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PSMN020-150W Datasheet PDF : 7 Pages
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Philips Semiconductors
Product specification
N-channel TrenchMOS™ transistor
PSMN020-150W
MECHANICAL DATA
Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247
α
SOT429
E
P
q
S
A
A1
β
R
D
Y
L1(1)
b2
L
1
2
b
b1
e
e
3
wM
Q
c
0
10 20 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A A1 b b1 b2 c
DE
e
L L1(1) P
Q
q
R
S
wY
α
β
mm
5.3
4.7
1.9
1.7
1.2 2.2 3.2
0.9 1.8 2.8
0.9
0.6
21
20
16 5.45 16
15
15
4.0 3.7
3.6 3.3
2.6
2.4
5.3
3.5
3.3
7.5
7.1
0.4
15.7
15.3
6°
4°
17°
13°
Note
1. Tinning of terminals are uncontrolled within zone L1.
OUTLINE
VERSION
IEC
SOT429
REFERENCES
JEDEC
EIAJ
TO-247
EUROPEAN
PROJECTION
ISSUE DATE
98-04-07
99-08-04
Fig.16. SOT429; pin 2 connected to mounting base
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for SOT429 envelope.
3. Epoxy meets UL94 V0 at 1/8".
November 1999
6
Rev 1.000
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