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PSMN020-150W Datasheet PDF : 7 Pages
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Philips Semiconductors
N-channel TrenchMOS™ transistor
Product specification
PSMN020-150W
Normalised Power Derating, PD (%)
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
Mounting Base temperature, Tmb (C)
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/PD 25 ˚C = f(Tmb)
Normalised Current Derating, ID (%)
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100 125 150 175
Mounting Base temperature, Tmb (C)
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/ID 25 ˚C = f(Tmb); VGS ≥ 10 V
1000 Peak Pulsed Drain Current, IDM (A)
RDS(on) = VDS/ ID
100
tp = 10 us
100 us
1 ms
10
D.C.
10 ms
100 ms
1
1
10
100
1000
Drain-Source Voltage, VDS (V)
Fig.3. Safe operating area
ID & IDM = f(VDS); IDM single pulse; parameter tp
1 Transient thermal impedance, Zth j-mb (K/W)
D = 0.5
0.2
0.1 0.1
0.05
0.02
0.01
PD tp D = tp/T
0.001
1E-06
single pulse
1E-05
1E-04 1E-03 1E-02
Pulse width, tp (s)
T
1E-01
1E+00
Fig.4. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
80 Drain Current, ID (A)
Tj = 25 C VGS = 10V
8V
70
6V
60
50
5.2 V
40
30
5V
20
10
0
0
4.8 V
4.6 V
4.2 V 4.4 V
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
Drain-Source Voltage, VDS (V)
Fig.5. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS)
Drain-Source On Resistance, RDS(on) (Ohms)
0.1
4.2 V
4.8 V
0.09
4.6 V
0.08 4.4V
5V
0.07
Tj = 25 C
0.06
0.05
5.2V
0.04
0.03
0.02
6V
0.01
0
0
8V
VGS = 10V
10 20 30 40 50 60 70 80
Drain Current, ID (A)
Fig.6. Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID)
November 1999
3
Rev 1.000
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