STPS20H100CR-H Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
STPS20H100CR-H Datasheet PDF : 11 Pages
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Characteristics
STPS20H100C
Figure 1.
Average forward power dissipation Figure 2.
versus average forward current
(per diode)
Average forward current versus
ambient temperature
(δ = 0.5, per diode)
PF(AV)(W)
8
6
4
δ = 0.05
δ = 0.1 δ = 0.2 δ = 0.5
δ=1
IF(AV)(A)
12
10
Rth(j-a)=15°C/W
8
Rth(j-a)=40°C/W
6
Rth(j-a)=Rth(j-c)
TO-220AB
TO-220FPAB
4
T
T
2
2
IF(AV)(A)
δ=tp/T
tp
δ=tp/T
tp
Tamb(°C)
0
0
0
2
4
6
8
10
12
0
25
50
75
100
125
150
175
Figure 3. Normalized avalanche power
derating versus pulse duration
PARM(tp)
PARM(1µs)
1
Figure 4.
Normalized avalanche power
derating versus junction
temperature
PARM(Tj)
1.2 PARM(25 °C)
1
0.1
0.8
0.6
0.01
0.4
0.2
0.001
tp(µs)
0
Tj(°C)
0.01
0.1
1
10
100
1000
25
50
75
100
125
150
Figure 5.
Non repetitive surge peak forward Figure 6.
current versus overload duration
(maximum values, per diode)
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
IM(A)
200
180
160
140
120
100
80
60
40 IM
20
0
1E-3
t
δ=0.5
1E-2
t(s)
TO-220AB, D2PAK, I2PAK
IM(A)
140
120
100
TC=50°C
80
TC=75°C
60
1E-1
TC=125°C
1E+0
40
IM
20
0
1E-3
t
δ=0.5
1E-2
t(s)
1E-1
TO-220FPAB
Tj=50°C
Tj=75°C
Tj=125°C
1E+0
4/11
Doc ID 5386 Rev 7
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