STPS20H100CR-H Ver la hoja de datos (PDF) - STMicroelectronics
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STPS20H100CR-H Datasheet PDF : 11 Pages
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STPS20H100C
Characteristics
Figure 7.
Relative variation of thermal
Figure 8.
impedance junction to case versus
pulse duration (per diode)
Relative variation of thermal
impedance junction to case versus
pulse duration (per diode)
Zth(j-c)/Rth(j-c)
1.0
TO-220AB, D2PAK, I2PAK
0.8
Zth(j-c)/Rth(j-c)
1.0
TO-220FPAB
0.8
δ = 0.5
0.6
δ = 0.5
0.6
0.4
δ = 0.2
δ = 0.1
0.2
Single pulse
0.0
1E-3
1E-2
tp(s)
1E-1
T
δ=tp/T
tp
1E+0
0.4
δ = 0.2
δ = 0.1
0.2
Single pulse
0.0
1E-2
T
tp(s)
δ=tp/T
tp
1E-1
1E+0
1E+1
Figure 9.
Reverse leakage current versus
reverse voltage applied
(typical values, per diode)
IR(µA)
1E+4
1E+3
Tj=150°C
1E+2
1E+1
Tj=125°C
Tj=100°C
Figure 10. Junction capacitance versus
reverse voltage applied
(typical values, per diode)
C(pF)
1000
F=1MHz
VOSC=30mVRMS
Tj=25°C
500
1E+0
200
1E-1
Tj=25°C
VR(V)
1E-2
100
0 10 20 30 40 50 60 70 80 90 100
1
2
VR(V)
5
10
20
50
100
Figure 11. Forward voltage drop versus
forward current
(maximum values, per diode)
IFM(A)
100.0
10.0
1.0
Tj=150°C
(typical values)
Tj=125°C
(typical values)
Tj=125°C
Tj=25°C
VFM(V)
0.1
0.0
0.2
0.4
0.6
0.8
1.0
Figure 12. Thermal resistance junction to
ambient versus copper surface
under tab
Rth(j-a)(°C/W)
80
70
60
50
40
30
20
10
0
1.2
0
S(Cu)(cm²)
5
10
15
20
25
30
35
40
Doc ID 5386 Rev 7
5/11
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