NTMD3N08LR2G Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
Fabricante
NTMD3N08LR2G
ON Semiconductor
NTMD3N08LR2G Datasheet PDF : 8 Pages
| |||
NTMD3N08LR2
TYPICAL ELECTRICAL CHARACTERISTICS
5
10 V
9V
4
8V
7V
3
4V
5V
6V
VGS = 3.5 V
2
1
TJ = 25°C
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
6
5 VDS ≥ 10 V
4
3
2
TJ = 25°C
1
TJ = 100°C TJ = − 55°C
0
0
1
2
3
4
5
6
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.5
0.4
0.3
0.2
0.1
0
0
VGS = 5.0 V
TJ = 100°C
TJ = 25°C
TJ = −55°C
1
2
3
4
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus
Drain Current and Temperature
0.3
TJ = 25°C
0.25
0.2
0.15
VGS = 5.0 V
VGS = 10 V
0.1
0.05
0
5
0
1
2
3
4
5
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2.5
VGS = 5.0 V
ID = 1.5 A
2
1.5
100,000
10,000
VGS = 0 V
1000
TJ = 175°C
1
100
0.5
10
TJ = 100°C
0
−50 −25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
1
10 20
30
40
50
60
70
80
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
http://onsemi.com
3
Share Link: