EDL1216CASA-10-E Ver la hoja de datos (PDF) - Elpida Memory, Inc

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EDL1216CASA-10-E

128M bits Mobile RAM

Elpida Memory, Inc 

EDL1216CASA

Precharge command (/CS, /RAS, /WE = Low, /CAS = High)

This command begins precharge operation of the bank selected by BA0 and BA1. When A10 is High, all banks are

precharged, regardless of BA0 and BA1. When A10 is Low, only the bank selected by BA0 and BA1 is precharged.

After this command, the Mobile RAM can’t accept the activate command to the precharging bank during tRP

(precharge to activate command period). This command corresponds to a conventional DRAM’s /RAS rising.

CLK

CKE H

/CS

/RAS

/CAS

/WE

BA0, BA1

A10

(Precharge select)

Add

Precharge command

Write command (/CS, /CAS, /WE = Low, /RAS = High)

This command sets the burst start address given by the column address to begin the burst write operation. The first

write data in burst mode can input with this command with subsequent data on following clocks.

CLK

CKE H

/CS

/RAS

/CAS

/WE

BA0, BA1

A10

Add

Col.

Write command

Read command (/CS, /CAS = Low, /RAS, /WE = High)

Read data is available after /CAS latency requirements have been met. This command sets the burst start address

given by the column address.

CLK

CKE H

/CS

/RAS

/CAS

/WE

BA0, BA1

A10

Add

Col.

Read command

Data Sheet E0195E30 (Ver. 3.0)

11

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