BSM100GB120DN2 Ver la hoja de datos (PDF) - Infineon Technologies
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BSM100GB120DN2 Datasheet PDF : 9 Pages
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BSM 100 GB 120 DN2
Typ. switching time
I = f (IC) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, RG = 6.8 Ω
10 3
t
ns
tdoff
tdon
tr
10 2
tf
Typ. switching time
t = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, IC = 100 A
10 4
ns
t
10 3
tdoff
tdon
tr
10 2
tf
10 1
0
50
100
150
A
250
IC
Typ. switching losses
E = f (IC) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, RG = 6.8 Ω
60
mWs
50
E
45
40
35
30
25
20
15
10
5
0
0
Eon
Eoff
50
100
150
A
250
IC
10 1
0
10
20
30
40
Ω
60
RG
Typ. switching losses
E = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600V, VGE = ± 15 V, IC = 100 A
40
Eon
mWs
E
30
25
20
15
Eoff
10
5
0
0
10
20
30
40
Ω
60
RG
Semiconductor Group
7
Mar-29-1996
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