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Número de pieza
componentes Descripción
BSM100GB120DN2 Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
BSM100GB120DN2
IGBT Power Module
Infineon Technologies
BSM100GB120DN2 Datasheet PDF : 9 Pages
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BSM 100 GB 120 DN2
Forward characteristics of fast recovery
reverse diode
I
F
= f(V
F
)
parameter:
T
j
200
A
I
F
160
140
120
T
j
=125°C
T
j
=25°C
100
80
60
40
20
0
0.0 0.5 1.0 1.5 2.0
V
3.0
V
F
Transient thermal impedance
Z
th JC
=
ƒ
(
t
p
)
parameter:
D = t
p
/
T
Diode
10
0
K/W
Z
thJC
10
-1
10
-2
10
-3
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
-4
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
s 10
0
Semiconductor Group
8
Mar-29-1996
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