BSM100GB120DN2 Ver la hoja de datos (PDF) - Infineon Technologies

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componentes Descripción

Fabricante

BSM100GB120DN2

IGBT Power Module

Infineon Technologies 

IGBT Power Module

BSM 100 GB 120 DN2

• Half-bridge

• Including fast free-wheeling diodes

• Package with insulated metal base plate

Type

BSM 100 GB 120 DN2

VCE IC

Package

1200V 150A HALF-BRIDGE 2

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-gate voltage

RGE = 20 kΩ

Gate-emitter voltage

DC collector current

TC = 25 °C

TC = 80 °C

Pulsed collector current, tp = 1 ms

TC = 25 °C

TC = 80 °C

Power dissipation per IGBT

TC = 25 °C

Chip temperature

Storage temperature

Thermal resistance, chip case

Diode thermal resistance, chip case

Insulation test voltage, t = 1min.

Creepage distance

Clearance

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

Symbol

VCE

VCGR

VGE

IC

ICpuls

Ptot

Tj

Tstg

RthJC

RthJCD

Vis

-

-

-

-

Ordering Code

C67076-A2107-A70

Values

Unit

1200

V

1200

± 20

A

150

100

300

200

W

800

+ 150

°C

-55 ... + 150

≤ 0.16

K/W

≤ 0.3

2500

Vac

20

mm

11

F

-

55 / 150 / 56

Semiconductor Group

1

Mar-29-1996

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