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TIP2955 Datasheet PDF : 6 Pages
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TIP3055 (NPN),
TIP2955 (PNP)
Complementary Silicon
Power Transistors
Designed for general−purpose switching and amplifier applications.
Features
• DC Current Gain −
hFE = 20 − 70 @ IC
= 4.0 Adc
• Collector−Emitter Saturation Voltage −
VCE(sat) = 1.1 Vdc (Max) @ IC
= 4.0 Adc
• Excellent Safe Operating Area
• These are Pb−Free Devices*
MAXIMUM RATINGS
Rating
Collector − Emitter Voltage
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
Base Current
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCER
VCB
VEB
IC
IB
PD
TJ, Tstg
Value
60
70
100
7.0
15
7.0
90
0.72
– 65 to
+ 150
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
W
W/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
1.39
°C/W
Thermal Resistance, Junction−to−Ambient RqJA
35.7
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
15 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
60 VOLTS, 90 WATTS
SOT−93 (TO−218)
CASE 340D
STYLE 1
TO−247
CASE 340L
STYLE 3
NOTE: Effective June 2012 this device will
be available only in the TO−247
package. Reference FPCN# 16827.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
1
May, 2012 − Rev. 7
Publication Order Number:
TIP3055/D
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