TIP2955 Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza

componentes Descripción

Fabricante

TIP2955

Complementary Silicon Power Transistors

ON Semiconductor 

TIP3055 (NPN), TIP2955 (PNP)

1000

VCE = 4.0 V

TJ = 25°C

100

TIP3055

TIP2955

10

0.1

0.2 0.3 0.5 0.7 1.0

2.0 3.0 5.0 7.0 10

IC, COLLECTOR CURRENT (AMP)

Figure 1. DC Current Gain

100

50

30

20

10

5.0

3.0

2.0

1.0

0.5

0.3

0.2

0.1

1.0

300 ms

1.0 ms

dc

10 ms

SECONDARY BREAKDOWN LIMIT

BONDING WIRE LIMIT

THERMAL LIMIT @ TC = 25°C

TJ = 150°C

2.0 4.0 6.0 10

20

40 60

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 2. Maximum Rated Forward Bias

Safe Operating Area

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 2 is based on TC = 25°C; TJ(pk) is

variable depending on power level. Second breakdown

pulse limits are valid for duty cycles to 10% but must be

derated for temperature.

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