Fabricante
Número de pieza
componentes Descripción
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ON Semiconductor
Quad Variable Reluctance Sensor Interface IC
ON Semiconductor
Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23
ON Semiconductor
Small Signal MOSFET 60 V, 380 mA, Single, N−Channel, SOT−23
ON Semiconductor
Quad Variable Reluctance Sensor Interface IC
ON Semiconductor
Small Signal MOSFET 60 V, 380 mA, Single, N−Channel, SOT−23
ON Semiconductor
Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23
ON Semiconductor
Small Signal MOSFET 60 V, 340 mA, Single, N−Channel, SC−70
ON Semiconductor
Small Signal MOSFET 60 V, 380 mA, Single, N−Channel, SOT−23
ON Semiconductor
Small Signal MOSFET 60 V, 340 mA, Single, N−Channel, SC−70
ON Semiconductor
Quad Variable Reluctance Sensor Interface IC
ON Semiconductor
Small Signal MOSFET 60 V, 380 mA, Single, N−Channel, SOT−23
Freescale Semiconductor
Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
Freescale Semiconductor
Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
Seiko Epson Corp
GYRO Sensor (Digital Output)
NXP Semiconductors.
Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
