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Número de pieza
componentes Descripción
T50M
Hoja de datos
coincide,
conparecido a
N/A
comienza con
N/A
termina en
N/A
Incluido
*LT50M*
(1)
*T50M1*
(2)
*T50M3*
(9)
*T50M5*
(21)
*T50M6*
(38)
*T50M7*
(31)
*T50M8*
(34)
*T50MC*
(2)
*T50MR*
(2)
*T50MU*
(5)
Fabricante
ALL
Advanced Power Techn...
Advanced Power Techn...
Unspecified
Inchange Semiconduct...
Microsemi Corporatio...
ON Semiconductor
ON Semiconductor
Toshiba
Fabricante
Número de pieza
componentes Descripción
Ver
Advanced Power Technology
AP
T50M
50
POWER MOS V® 500V 74.5A 0.050Ω
PDF
Toshiba
G
T50M
101
Discrete IGBT - 30G124 ~ 30F125
PDF
Advanced Power Technology
AP
T50M
65
POWER MOS 7™
PDF
Advanced Power Technology
AP
T50M
85
POWER MOS V®
PDF
Toshiba
G
T50M
322
Discrete IGBT - 30G124 ~ 30F125
PDF
Toshiba
G
T50M
R21
Discrete IGBT - 30G124 ~ 30F125
PDF
Advanced Power Technology
AP
T50M
65
POWER MOS 7™ FREDFET
PDF
Advanced Power Technology
AP
T50M
80
POWER MOS V® - 500V 58A 0.080Ω
PDF
Toshiba
G
T50M
101_
Discrete IGBT - 30G124 ~ 30F125
PDF
Toshiba
G
T50M
322_
Discrete IGBT - 30G124 ~ 30F125
PDF
Toshiba
G
T50M
R21_
Discrete IGBT - 30G124 ~ 30F125
PDF
Advanced Power Technology
AP
T50M
60JN
POWER MOS IV®
PDF
Advanced Power Technology
AP
T50M
60JN
N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
PDF
Microsemi Corporation
AP
T50M
85JVR
POWER MOS V®
PDF
Unspecified
AP
T50M
38JLL
Insulated Gate Bipolar Transistors (IGBTs)
PDF
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