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Número de pieza
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T1G4020036-FL
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coincide,
conparecido a
T1G4020036-FL
(1)
comienza con
T1G4020036-FL
E
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(1)
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TriQuint Semiconduct...
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componentes Descripción
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TriQuint Semiconductor
T1G4020036-FL
2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor
PDF
TriQuint Semiconductor
T1G4020036-FL
EVB1
2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor
PDF
Match & Start :
T1G4020036-F
L
TriQuint Semiconductor
T1G4020036-F
L
2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor
Ver
TriQuint Semiconductor
T1G4020036-F
LEVB1
2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor
Ver
TriQuint Semiconductor
T1G4020036-F
S
2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor
Ver
Qorvo, Inc
T1G4020036-F
S
DC – 3.5 GHz, 50 V, 2 x 200 W GaN RF Transistor
Ver
Qorvo, Inc
T1G4020036-F
S-EVB1
DC – 3.5 GHz, 50 V, 2 x 200 W GaN RF Transistor
Ver
TriQuint Semiconductor
T1G4020036-F
SEVB1
2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor
Ver
1
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