NTH4
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componentes Descripción
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ON Semiconductor
Silicon Carbide (SiC) MOSFET – EliteSiC, 12mohm, 650 V, M2, TO-247-4L
ON Semiconductor
Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-4L
ON Semiconductor
Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 1200V, M1, TO-247-4L
ON Semiconductor
Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200V, M3S, TO-247-4L
ON Semiconductor
Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, TO-247-4L
ON Semiconductor
Silicon Carbide (SiC) MOSFET – EliteSiC, 40mohm, 1200V, M1, TO-247-4L
ON Semiconductor
Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, TO-247-4L
ON Semiconductor
Silicon Carbide (SiC) MOSFET – EliteSiC, 160mohm, 1200V, M1, TO-247-4L
ON Semiconductor
MOSFET - Power, Single N-Channel, SUPERFET, FAST, TO247-4L 600 V, 61 m, 41 A
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