G1003A-S Hoja de datos, G1003A-S PDF

G1003A-S

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componentes Descripción

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DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

G1003A-SOT23-3L

The G1003A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge

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Shenzhen Taychipst Electronic Co., Ltd

G100

Silicon Z–Diodes

Ver

Unspecified

G103

GaAlAs (880 nm peak) Photodiode

Ver

New Jersey Semiconductor

G105

SIDACs

Ver

Electronics Industry

G105

SIDACs

Ver

New Jersey Semiconductor

G105C

SIDACs

Ver

XP Power Limited

G10CT

ISOLATED, PROPORTIONAL DC TO HV DC CONVERTERS

Ver

Powerbox

G10CT

1.5-10 WATTS SINGLE OUTPUT DC/DC INDUSTRIAL

Ver

Electronics Industry

G105C

SIDACs

Ver

DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

G1003A

The G1003A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge

Ver

Infineon Technologies

G10T60_2006

Low Loss IGBT in TrenchStop® and Fieldstop technology

Ver

Infineon Technologies

G10T60

Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology

Ver

Intersil

G10N40

10A, 400V and 500V N-Channel IGBTs

Ver

Infineon Technologies

G10T60_2009

Low Loss IGBT in TrenchStop® and Fieldstop technology

Ver

Intersil

G10N50

10A, 400V and 500V N-Channel IGBTs

Ver

Infineon Technologies

G10T60_2007

Low Loss IGBT in TrenchStop® and Fieldstop technology

Ver

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