2SC5338- Hoja de datos, 2SC5338- PDF - DATSAHEETQ

2SC5338-

Hoja de datos

Fabricante

Número de pieza

componentes Descripción

Ver

Renesas Electronics

Added the packing specification of non-reel for RF & Microwave transistor

Renesas Electronics

Added the packing specification of non-reel for RF & Microwave transistor

NEC => Renesas Technology

NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

Renesas Electronics

NPN SILICON RF TRANSISTOR

Match & Start : 2SC5338-

Inchange Semiconductor

Silicon NPN Power Transistors

Renesas Electronics

NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold

Panasonic Corporation

Silicon NPN epitaxial planer type

Toshiba

SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR

Renesas Electronics

NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD

NEC => Renesas Technology

NPN EPITAXIAL SILICON TRANSISTOR

Toshiba

TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE

Quanzhou Jinmei Electronic

Silicon NPN Power Transistors

NEC => Renesas Technology

NPN Silicon Transistor

Renesas Electronics

NPN SILICON RF TRANSISTOR

Toshiba

SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR

SavantIC Semiconductor

Silicon NPN Power Transistors

California Eastern Laboratories.

NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold

California Eastern Laboratories.

NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD

NEC => Renesas Technology

NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

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