2SD389 Ver la hoja de datos (PDF) - Wing Shing International Group

Número de pieza

componentes Descripción

Fabricante

2SD389

NPN epitaxial silicon transistor. Low frequency power amplifier

Wing Shing International Group 

2SD389

NPN EPITAXIAL SILICON TRANSISTOR

LOW FREQUENCY POWER AMPLIFIER

! Complement to 2SB507

ABSOLUTE MAXIMUM RATINGS (TA=25℃)

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base voltage

Collector Current (DC)

Collector Dissipation (Tc=25℃)

Junction Temperature

Storage Temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Rating

60

60

7

4

30

150

-50~150

Unit

V

V

V

A

W

℃

℃

TO-220

ELECTRICAL CHARACTERISTICS (TA=25℃)

Characteristic

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Collector- Emitter Saturation Voltage

Current Gain Bandwidth Product

Symbol

ICBO

IEBO

hFE1

VCE(sat)

fT

Test Condition

Min Typ

VCB= 60V , IE=0

VEB= 7V , IC=0

VCE= 3V , IC=1A

70

IC=2A , IB=0.2A

VCE= 5V , IC=0.5A

18

Max

100

100

1.0

Unit

µA

µA

V

MHZ

Wing Shing Computer Components Co., (H.K.)Ltd.

Homepage: http://www.wingshing.com

Tel:(852)2341 9276 Fax:(852)2797 8153

E-mail: wsccltd@hkstar.com

Share Link: