FX803 Ver la hoja de datos (PDF) - SANYO -> Panasonic

Número de pieza

componentes Descripción

Fabricante

FX803

DC-DC Converter

SANYO -> Panasonic 

Ordering number:EN5053

FX803

TR:NPN Epitaxial Planar Silicon Transistor

SBD:Schottky Barrier Diode (Twin type · Cathode Common)

DC-DC Converter

Features

· Complex type of a low saturation voltage, high

speed switching and large current NPN transistor and

a fast recovery and low forward voltage Schottky

barrier diode facilitating high-sensity mounting.

· The FX803 is composed of 2 chips, one being

equivalent to the 2SB1628 and the other the

SB20W03P, placed in one package.

Package Dimensions

unit:mm

2126

[FX803]

Electrical Connection

1:Base

2:Emitter

3:Anode1

4:Anode2

5:Cathode

6:Collector

Specifications

(Top view)

Absolute Maximum Ratings at Ta = 25˚C

Parameter

[TR]

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Collector Current (Pulse)

Base Current

Collector Dissipation

Junction Temperature

[SBD] (Value per element)

Repetitive Peak Reverse Voltage

Non-repetitive Peak Reverse Surge Voltage

Average Rectified Current

Surge Forward Current

Junction Temperature

Storage Temperature

Symbol

Conditions

VCBO

VCEO

VEBO

IC

ICP

IB

PC

Tj

Mounted on ceramic board (750mm2×0.8mm) 1 unit

VRRM

VRSM

IO

IO

IFSM

Tj

Tstg

(Total)

50Hz sine wave, 1cycle

· Marking:803

1:Base

2:Emitter

3:Anode1

4:Anode2

5:Cathode

6:Collector

SANYO:XP6

(Bottom view)

Ratings

Unit

60 V

20 V

6V

5A

8A

1A

1.5 W

150 ˚C

30 V

35 V

2A

4A

10 A

–55 to +125 ˚C

–55 to +125 ˚C

Continued on next page.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

52098HA (KT)/41095TS (KOTO) TA-0135 No.5053-1/4

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