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FC18H Ver la hoja de datos (PDF) - SANYO -> Panasonic

Número de pieza
componentes Descripción
Fabricante
FC18H Datasheet PDF : 5 Pages
1 2 3 4 5
Continued from preceding page.
Electrical Characteristics at Ta = 25˚C
FC18
Parameter
Symbol
Conditions
[FET]
G-D Breakdown Voltage
Gate Cutoff Current
Cutoff Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Noise Figure
[TR]
Collector Cuttoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
B-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
E-B Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
V(BR)GDS
IGSS
VGS(off)
IDSS
| Yfs |
Ciss
Crss
NF
IG=–10µA, VDS=0
VGS=–10V, VDS=0
VDS=5V, ID=100µA
VDS=5V, VGS=0
VDS=5V, VGS=0, f=1kHz
VDS=5V, VGS=0, f=1MHz
VDS=5V, VGS=0, f=1MHz
VDS=5V, Rg=1kΩ, ID=1mA, f=1kHz
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
VCB=35V, IE=0
VEB=4V, IC=0
VCE=6V, IC=1mA
VCE=6V, IC=10mA
VCB=6V, f=1MHz
IC=50mA, IB=5mA
IC=50mA, IB=5mA
IC=10µA, IE=0
IC=1mA, RBE=
IE=10µA, IC=0
See specified Test Circuit
See specified Test Circuit
tf
See specified Test Circuit
Note*:The FC18 is classified by IDSS as follows : (unit:mA)
6.0 F 120
10.0 G 20.0
16.0 H 32.0
Marking:18
IDSS rank:F, G, H
The specifications shown above are for each individual FET or transistor.
Switching Time Test CIrcuit
Ratings
Unit
min
typ
max
–15
V
–1.0 nA
–0.3 –0.7 –1.5 V
6.0*
32.0* mA
20
38
mS
10.0
pF
2.9
pF
1.0
dB
135
200
1.7
0.08
0.8
55
50
6
0.15
0.75
0.20
0.1 µA
0.1 µA
400
MHz
pF
0.4 V
1.0 V
V
V
V
µs
µs
µs
No.4983-2/5

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