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MJW16212

SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors

Motorola => Freescale 

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

SCANSWITCH™

NPN Bipolar Power Deflection Transistor

For High and Very High Resolution Monitors

The MJW16212 is a state–of–the–art SWITCHMODE™ bipolar power transistor. It

is specifically designed for use in horizontal deflection circuits for 20 mm diameter

neck, high and very high resolution, full page, monochrome monitors.

• 1500 Volt Collector–Emitter Breakdown Capability

• Typical Dynamic Desaturation Specified (New Turn–Off Characteristic)

• Application Specific State–of–the–Art Die Design

• Fast Switching:

200 ns Inductive Fall Time (Typ)

2000 ns Inductive Storage Time (Typ)

• Low Saturation Voltage:

0.15 Volts at 5.5 Amps Collector Current and 2.5 A Base Drive

• Low Collector–Emitter Leakage Current — 250 µA Max at 1500 Volts — VCES

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ • High Emitter–Base Breakdown Capability For High Voltage Off Drive Circuits —

8.0 Volts (Min)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Breakdown Voltage

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Sustaining Voltage

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter–Base Voltage

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ RMS Isolation Voltage (2)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (for 1 sec, TA = 25_C,

Rel. Humidity < 30%)

Per Fig. 14

Per Fig. 15

Symbol

VCES

VCEO(sus)

VEBO

VISOL

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current — Continuous

IC

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current — Pulsed (1)

ICM

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current — Continuous

IB

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current — Pulsed (1)

IBM

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Maximum Repetitive Emitter–Base

Avalanche Energy

W (BER)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation @ TC = 25_C

PD

Total Power Dissipation @ TC = 100_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Derated above TC = 25_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Temperature Range

TJ, Tstg

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic

Symbol

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance — Junction to Case

RθJC

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Lead Temperature for Soldering Purposes

TL

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 1/8″ from the case for 5 seconds

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v (1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%.

Value

1500

650

8.0

—

—

10

15

5.0

10

0.2

150

39

1.49

– 55 to 125

Max

0.67

275

Unit

Vdc

Vdc

Vdc

V

Adc

Adc

mJ

Watts

W/_C

_C

Unit

_C/W

_C

(2) Proper strike and creepage distance must be provided.

Preferred devices are Motorola recommended choices for future use and best overall value.

SCANSWITCH and SWITCHMODE are trademarks of Motorola Inc.

REV 1

©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data

Order this document

by MJW16212/D

MJF18002 (See MJE18002)

MJF18004 (See MJE18004)

MJF18006 (See MJE18006)

MJF18008 (See MJE18008)

MJW16212*

*Motorola Preferred Device

POWER TRANSISTOR

10 AMPERES

1500 VOLTS – VCES

50 AND 150 WATTS

CASE 340F–03

TO–247AE

3–1

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