BFG591 Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
componentes Descripción
Fabricante
BFG591 Datasheet PDF : 12 Pages
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Philips Semiconductors
NPN 7 GHz wideband transistor
Product specification
BFG591
3.0
Ptot
(W)
2.5
2.0
1.5
1.0
0.5
0
0
MGC791
50
100
150 Ts (oC) 200
Fig.2 Power derating curve.
250
handbook, halfpage
h FE
200
150
100
50
0
10 2
10 1
1
MRA749
10
10 2
IC (mA)
VCE = 12 V.
Fig.3 DC current gain as a function of collector
current, typical values.
handbook1, .h2alfpage
C re
(pF)
0.8
MGC792
0.4
0
0
4
8
12
16
VCB (V)
handbook, h8alfpage
fT
(GHz)
6
4
2
0
1
MGC793
10
10 2
IC (mA)
IC = 0; f = 1 MHz.
Fig.4 Feedback capacitance as a function of
collector-base voltage, typical values.
1995 Sep 04
f = 1 GHz; VCE = 12 V.
Fig.5 Transition frequency as a function of
collector current, typical values.
5
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