BFQ135 Ver la hoja de datos (PDF) - Philips Electronics
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Fabricante
BFQ135 Datasheet PDF : 12 Pages
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Philips Semiconductors
NPN 6.5 GHz wideband transistor
Product specification
BFQ135
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
hFE
DC current gain
Cc
collector capacitance
Ce
emitter capacitance
Cre
feedback capacitance
fT
transition frequency
GUM
maximum unilateral power gain
(note 1)
VO
output voltage
d2
second order intermodulation
distortion
CONDITIONS
IE = 0; VCB = 18 V
IC = 120 mA; VCE = 18 V;
Tamb = 25 °C
IE = ie = 0; VCB = 18 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IC = 0; VCE = 18 V; f = 1 MHz
IC = 120 mA; VCE = 18 V;
f = 1 GHz; Tamb = 25 °C
IC = 120 mA; VCE = 18 V;
f = 500 MHz; Tamb = 25 °C
IC = 120 mA; VCE = 18 V;
f = 800 MHz; Tamb = 25 °C
note 2
note 3
note 4
note 5
MIN.
−
55
TYP.
−
−
MAX. UNIT
50
µA
−
−
1.8 −
pF
−
5.5 −
pF
−
1
1.2 pF
−
6.5 −
GHz
−
17
−
dB
−
13.5 −
dB
−
1.35 −
V
−
1.2 −
V
−
−70 −
dB
−
−70 −
dB
Notes
1. GUM is the maximum unilateral power gain, assuming
S12 is
zero and
GUM
=
10
log----1-----–------S----1---1----2S----2---1---1-2----–------S----2--2-----2---- dB˙ .
2. dim = −60 dB (DIN 45004B); IC = 120 mA; VCE = 18 V; RL = 75 Ω; Tamb = 25 °C;
Vp = VO at dim = −60 dB; fp = 445.25 MHz;
Vq = VO −6 dB; fq = 453.25 MHz;
Vr = VO −6 dB; fr = 455.25 MHz;
measured at fp + fq − fr = 443.25 MHz.
3. dim = −60 dB (DIN 45004B); IC = 120 mA; VCE = 18 V; RL = 75 Ω; Tamb = 25 °C;
Vp = VO at dim = −60 dB; fp = 795.25 MHz;
Vq = VO −6 dB; fq = 803.25 MHz;
Vr = VO −6 dB; fr = 805.25 MHz;
measured at fp + fq − fr = 793.25 MHz.
4. IC = 90 mA; VCE = 18 V; VO = 50 dBmV; Tamb = 25 °C;
fp = 50 MHz; fq = 400 MHz;
measured at fp + fq = 450 MHz.
5. IC = 90 mA; VCE = 18 V; VO = 50 dBmV; Tamb = 25 °C;
fp = 250 MHz; fq = 560 MHz;
measured at fp + fq = 810 MHz.
1997 Nov 07
4
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