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BFQ135

NPN 6.5 GHz wideband transistor

Philips Electronics 

Philips Semiconductors

NPN 6.5 GHz wideband transistor

Product specification

BFQ135

FEATURES

• Optimum temperature profile and

excellent reliability properties

ensured by emitter-ballasting

resistors and application of gold

sandwich metallization.

APPLICATIONS

• MATV and microwave amplifiers,

such as in aerial amplifiers, radar

systems, oscilloscopes, spectrum

analysers, etc.

DESCRIPTION

NPN wideband transistor in a 4-lead fpage

dual-emitter SOT172A2 package with

a ceramic cap. All leads are isolated

from the mounting base.

PINNING

PIN

DESCRIPTION

1 collector

2, 4 emitter

3 base

4

3

1

2

Top view

MSA457

Fig.1 SOT172A2.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

VCEO

IC

Ptot

hFE

fT

GUM

VO

collector-emitter voltage

open base

collector current (DC)

total power dissipation

Tc ≤ 145 °C

DC current gain

IC = 120 mA; VCE = 18 V; Tamb = 25 °C

transition frequency

IC = 120 mA; VCE = 18 V; f = 1 GHz;

Tamb = 25 °C

maximum unilateral power gain IC = 120 mA ; VCE = 18 V; f = 500 MHz;

Tamb = 25 °C

output voltage

IC = 120 mA; VCE = 18 V; f = 800 MHz;

Tamb = 25 °C

dim = −60 dB; IC = 120 mA; VCE = 18 V;

RL = 75 Ω; fp + fq − fr = 793.25 MHz;

Tamb = 25 °C

MIN. TYP. MAX. UNIT

−

−

19 V

−

−

150 mA

−

−

2.7 W

55 −

−

−

6.5 −

GHz

−

17 −

dB

−

13.5 −

dB

−

1.2 −

V

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.

1997 Nov 07

2

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