PMBTH10 Ver la hoja de datos (PDF) - Philips Electronics
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PMBTH10 Datasheet PDF : 7 Pages
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Philips Semiconductors
NPN 1 GHz general purpose switching transistor
Product specification
PMBTH10
THERMAL RESISTANCE
SYMBOL
PARAMETER
Rth j-s
from junction to soldering point (note 1)
Note
1. Ts is the temperature at the soldering point of the collector tab.
THERMAL RESISTANCE
260 K/W
CHARACTERISTICS
Tj = 25 °C.
SYMBOL
PARAMETER
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCE sat
VBE on
ICBO
IEBO
hFE
Cre
Crb
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector-emitter saturation voltage
base-emitter ON voltage
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter feedback
capacitance
collector-base feedback capacitance
fT
transition frequency
rbCc
collector-base time constant
CONDITIONS
open emitter; IC = 100 µA; IE = 0
open base; IC = 1 mA; IB = 0
open collector; IE = 10 µA; IC = 0
IC = 4 mA; IB = 0.4 mA
VCE = 10 V; IC = 4 mA
VCB = 25 V; IE = 0
VCB = 25 V; IC = 0
VCE = 10 V; IC = 4 mA
VCB = 10 V; IE = ie = 0;
f = 1 MHz
VCB = 10 V; IC = ic = 0;
f = 1 MHz
VCE = 10 V; IC = 4 mA;
f = 100 MHz; Tamb = 25 °C
VCB = 10 V; IC = 4 mA;
f = 100 MHz; Tamb = 25 °C
MIN. MAX. UNIT
30 −
V
25 −
V
3
−
V
−
0.5 V
−
0.95 V
−
100 nA
−
100 nA
60 −
−
0.7 pF
0.35 0.65 pF
650 −
MHz
−
9
ps
September 1995
3
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