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BU9831F Ver la hoja de datos (PDF) - ROHM Semiconductor

Número de pieza
componentes Descripción
Fabricante
BU9831F
ROHM
ROHM Semiconductor ROHM
BU9831F Datasheet PDF : 13 Pages
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Memory ICs
(unless otherwise noted, Ta = – 20 to + 85°C, VCC = 5V ± 10%)
Parameter
Symbol Min. Typ. Max. Unit
CS setup time
tCSS 400 —
ns
CS hold time
tCSH
0
— — ns
Data setup time
tDIS 300 —
ns
Data hold time
tDIH 300 —
ns
DO rise delay time
tPD1
— 700 ns
DO fall delay time
tPD0
— 700 ns
Self-timed programming cycle
tE / W — — 15 ms
CS minimum HIGH time
tCS
2
µs
Time during which READY / BUSY display is effective tSV
2
µs
Time that DO is HIGH-Z from (CS)
tOH
0
— 800 ns
Data clock HIGH time
tWH 900 —
ns
Data clock LOW time
tWL 900 —
ns
Resistance value stabilization time
tAW
— 1000 µs
BU9831 / BU9831F
Synchronous data I / O timing
CS
SK
Input DIO
Output DIO
t CSS
t WL
t DIS
t PD
t WH
t DIH
t PD
t CS
t CSH
t OH
Fig. 10 Synchronous data I / O timing
Reading of input data is done at the rising edge of SK.
Output of data is synchronized to the falling edge of SK.
Between commands, CS should be set to HIGH for longer than tCS.
If CS remains LOW, the next command cannot be received.
7

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