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K2477 Ver la hoja de datos (PDF) - NEC => Renesas Technology

Número de pieza
componentes Descripción
Fabricante
K2477
NEC
NEC => Renesas Technology NEC
K2477 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
2SK2477
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
Drain to Source On-Resistance
Gate to Source Cutoff Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SYMBOL
RDS (on)
VGS (off)
| yfs |
IDSS
IGSS
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
QG
QGS
QGD
VF (S-D)
trr
Qrr
MIN.
2.5
3.5
TYP.
0.65
MAX.
1.0
3.5
2 950
440
80
35
30
160
32
90
16
40
1.0
890
6.7
100
±100
UNIT
V
S
µA
nA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
µC
TEST CONDITIONS
VGS = 10 V, ID = 5.0 A
VDS = 10 V, ID = 1 mA
VDS = 20 V, ID = 5.0 A
VDS = VDSS, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 5.0 A
VGS = 10 V
VDD = 150 V
RG = 10
ID = 10 A
VDD = 450 V
VGS = 10 V
IF = 10 A, VGS = 0
IF = 10 A, VGS = 0
di/dt = 50 A/µs
Test Circuit 1 Avalanche Capability
D.U.T.
RG = 25
L
PG
50
VDD
VGS = 20 - 0 V
IAS
ID
VDD
BVDSS
VDS
Starting Tch
Test Circuit 3 Gate Charge
D.U.T.
IG = 2 mA
RL
PG.
50
VDD
Test Circuit 2 Switching Time
D.U.T.
PG.
RG
RG = 10
VGS
0
t
t = 1 us
Duty Cycle 1 %
RL
VGS
VGS
Wave Form
0 10 %
VDD
ID
VGS (on)
90 %
ID
Wave Form
0 10 %
td (on)
ID
tr
td (off)
90 %
90 %
10 %
tf
ton
toff
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2

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