IRF530 Ver la hoja de datos (PDF) - Philips Electronics

Número de pieza

componentes Descripción

Fabricante

IRF530

N-channel TrenchMOS transistor

Philips Electronics 

Philips Semiconductors

N-channel TrenchMOS™ transistor

Product specification

IRF530N

Source-Drain Diode Current, IF (A)

20

VGS = 0 V

18

16

14

12

175 C

10

8

Tj = 25 C

6

4

2

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2

Source-Drain Voltage, VSDS (V)

Fig.13. Typical reverse diode current.

IF = f(VSDS); conditions: VGS = 0 V; parameter Tj

Maximum Avalanche Current, IAS (A)

100

10

25 C

1

Tj prior to avalanche = 150 C

0.1

0.001

0.01

0.1

1

10

Avalanche time, tAV (ms)

Fig.14. Maximum permissible non-repetitive

avalanche current (IAS) versus avalanche time (tAV);

unclamped inductive load

August 1999

5

Rev 1.100

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