IRF530 Ver la hoja de datos (PDF) - Philips Electronics
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IRF530 Datasheet PDF : 7 Pages
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Philips Semiconductors
N-channel TrenchMOS™ transistor
Product specification
IRF530N
Normalised Power Derating, PD (%)
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
Mounting Base temperature, Tmb (C)
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/PD 25 ˚C = f(Tmb)
Normalised Current Derating, ID (%)
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100 125 150 175
Mounting Base temperature, Tmb (C)
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 10 V
100 Peak Pulsed Drain Current, IDM (A)
RDS(on) = VDS/ ID
10
D.C.
1
tp = 10 us
100 us
1 ms
10 ms
100 ms
0.1
1
10
100
Drain-Source Voltage, VDS (V)
1000
Fig.3. Safe operating area. Tmb = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter tp
10 Transient thermal impedance, Zth j-mb (K/W)
D = 0.5
1
0.2
0.1
0.05
0.1
0.02
PD tp D = tp/T
single pulse
0.01
1E-06
1E-05
1E-04 1E-03 1E-02
Pulse width, tp (s)
T
1E-01
1E+00
Fig.4. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
20 Drain Current, ID (A)
18
Tj = 25 C
16
14
12
VGS = 10V
8V
6V
10
8
6
4
2
0
0
5.4 V
5.2 V
4.6 V
5V
4.8 V
4.4 V
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
Drain-Source Voltage, VDS (V)
Fig.5. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS)
Drain-Source On Resistance, RDS(on) (Ohms)
0.2
4.8V
5.2 V
0.18 4.6V
5V
0.16
5.4 V
Tj = 25 C
0.14
6V
0.12
0.1
0.08
8V
0.06
VGS = 10V
0.04
0.02
0
0 2 4 6 8 10 12 14 16 18 20
Drain Current, ID (A)
Fig.6. Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID)
August 1999
3
Rev 1.100
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