SPU14N05 Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

SPU14N05

SIPMOS® Power Transistor

Infineon Technologies 

SPD 14N05

Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

Dynamic Characteristics

Gate to source charge

VDD = 40 V, ID = 13.5 A

Gate to drain charge

VDD = 40 V, ID = 13.5 A

Gate charge total

VDD = 40 V, ID = 13.5 A, VGS = 0 to 10 V

Gate plateau voltage

VDD = 40 V, ID = 13.5 A

Qgs

-

Qgd

-

Qg

-

V(plateau)

-

2.5 3.75 nC

3.8 5.7

9.5 14

5.9

-V

Reverse Diode

Inverse diode continuous forward current

IS

TC = 25 ˚C

-

- 13.5 A

Inverse diode direct current,pulsed

TC = 25 ˚C

ISM

-

-

54

Inverse diode forward voltage

VGS = 0 V, IF = 27 A

VSD

- 1.17 1.8 V

Reverse recovery time

VR = 30 V, IF=IS , diF/dt = 100 A/µs

trr

-

50 75 ns

Reverse recovery charge

VR = 30 V, IF=lS , diF/dt = 100 A/µs

Qrr

-

0.1 0.15 µC

Data Sheet

4

06.99

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