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J111

N-channel silicon field-effect transistors

Philips Electronics 

Philips Semiconductors

N-channel silicon field-effect transistors

Product specification

J111; J112; J113

DESCRIPTION

Symmetrical silicon n-channel

junction FETs in plastic TO-92

envelopes. They are intended for

applications such as analog switches,

choppers, commutators etc.

FEATURES

• High speed switching

• Interchangeability of drain and

source connections

• Low RDS on at zero gate voltage

PINNING

1 = gate

2 = source

3 = drain

Note: Drain and source are

interchangeable.

handbook, half1pa2ge

3

d

g

s

MAM042

Fig.1 Simplified outline and symbol, TO-92.

QUICK REFERENCE DATA

Drain-source voltage

Drain current

VDS = 15 V; VGS = 0

Total power dissipation

up to Tamb = 50 °C

Gate-source cut-off voltage

VDS = 5 V; ID = 1 µA

Drain-source on-state resistance

VDS = 0.1 V; VGS = 0

±VDS

max.

IDSS

min.

Ptot

−VGS off

max.

min.

max.

RDS on

max.

J111

40

J112

40

J113

40 V

20

5

2 mA

400

400

3

1

10

5

400 mW

0.5 V

3V

30

50

100 Ω

July 1993

2

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