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BF513

N-channel silicon field-effect transistors

Philips Electronics 

Philips Semiconductors

N-channel silicon field-effect transistors

Product specification

BF510 to 513

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Drain-source voltage

Drain-gate voltage (open source)

Drain current (DC or average)

Gate current

Total power dissipation up to Tamb = 40 °C (note 1)

Storage temperature range

Junction temperature

VDS

VDGO

ID

± IG

Ptot

Tstg

Tj

max. 20 V

max. 20 V

max. 30 mA

max. 10 mA

max. 250 mW

−65 to + 150 °C

max. 150 °C

THERMAL RESISTANCE

From junction to ambient (note 1)

Note

1. Mounted on a ceramic substrate of 8 mm × 10 mm × 0.7 mm.

Rth j-a

=

430 K/W

STATIC CHARACTERISTICS

Tamb = 25 °C

Gate cut-off current

−VGS = 0.2 V; VDS = 0

Gate-drain breakdown voltage

IS = 0; −ID = 10 µA

Drain current

VDS = 10 V; VGS = 0

Gate-source cut-off voltage

ID = 10 µA; VDS = 10 V

−IGSS

<

−V(BR)GDO

>

IDSS

>

<

BF510 511

512

513

10

10

10

10 nA

20

20

20

20 V

0.7

2.5

6

10 mA

3.0

7.0

12

18 mA

−V(P)GS

typ.

0.8

1.5

2.2

3V

December 1997

3

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