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IRF542 Datasheet PDF : 7 Pages
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IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRF540, RF1S540,
RF1S540SM
IRF541
IRF542
IRF543
UNITS
Drain to Source Breakdown Voltage (Note 1). . . . . . . . . .VDS
100
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . VDGR
100
Continuous Drain Current. . .
TC = 100oC . . . . . . . . . . . .
...........
...........
...
...
.........
.........
ID
ID
28
20
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . IDM
110
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
±20
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . PD
150
Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . .
1
80
100
80
V
80
100
80
V
28
25
25
A
20
17
17
A
110
100
100
A
±20
±20
±20
V
150
150
150
W
1
1
1
W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . Tpkg
230
-55 to 175
300
260
230
230
230
mJ
-55 to 175 -55 to 175 -55 to 175
oC
300
300
300
oC
260
260
260
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to TJ = 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
IRF540, IRF542,
RF1S540, RF1S540SM
BVDSS ID = 250µA, VGS = 0V (Figure 10)
100 -
-
V
IRF541, IRF543
80
-
-
V
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
IRF540, IRF541,
RF1S540, RF1S540SM
VGS(TH) VGS = VDS, ID = 250µA
IDSS VDS = Rated BVDSS, VGS = 0V
VDS
TJ =
= 0.8 x
150oC
Rated
BVDSS,
VGS
=
0V
ID(ON) VDS > ID(ON) x rDS(ON) MAX, VGS = 10V
(Figure 7)
2
-
4
V
-
-
25
µA
-
-
250
µA
28
-
-
A
IRF542, IRF543
25
-
-
A
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
IRF540, IRF541,
RF1S540, RF1S540SM
IGSS VGS = ±20V
rDS(ON) ID = 17A, VGS = 10V (Figures 8, 9)
-
-
±100 nA
- 0.060 0.077 Ω
IRF542, IRF543
- 0.080 0.100 Ω
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
gfs VDS ≥ 50V, ID = 17A (Figure 12)
8.7 13
-
S
td(ON) VDD = 50V, ID ≈ 28A, RG ≈ 9.1Ω, RL = 1.7Ω
-
15
23
ns
(Figures 17, 18) MOSFET Switching Times are
tr
Essentially Independent of Operating
-
70 110
ns
td(OFF) Temperature
-
40
60
ns
tf
-
50
75
ns
Qg(TOT) VGS = 10V, ID = 28A, VDS = 0.8 x Rated
-
38
59
nC
BVDSS, Ig(REF) = 1.5mA (Figures 14, 19, 20)
Gate Charge is Essentially Independent of Op-
Qgs erating Temperature
-
8
-
nC
Qgd
-
21
-
nC
5-2
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