PHN103 Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
componentes Descripción
Fabricante
PHN103 Datasheet PDF : 12 Pages
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Philips Semiconductors
N-channel enhancement mode
MOS transistor
Product specification
PHN103
20
handbook, halfpage
ISD
(A)
16
12
8
4
0
0
MGG336
(1) (2)
(3)
0.4
0.8 VSD (V) 1.2
VGD = 0.
(1) Tj = 150 °C.
(2) Tj = 25 °C.
(3) Tj = −65 °C.
Fig.10 Source current as a function of source-drain
diode forward voltage; typical values.
103
handbook, halfpage
(1)
RDSon
(mΩ)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
102
MGG337
10
0
−2
−4
−6
−8
−10
VGS (V)
VDS ≥ ID × RDSon; Tj = 25 °C.
(1) ID = 0.1 A.
(2) ID = 0.5 A.
(3) ID = 1.0 A.
(4) ID = 2.75 A.
(5) ID = 5.5 A.
(6) ID = 8.5 A.
(7) ID = 10 A.
(8) ID = 12 A.
Fig.11 Drain-source on-state resistance as a
function of gate-source voltage;
typical values.
1997 Jun 20
8
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