CEP1012L(2007) Ver la hoja de datos (PDF) - Chino-Excel Technology

Número de pieza

componentes Descripción

Fabricante

CEP1012L
(Rev.:2007)

N-Channel Enhancement Mode Field Effect Transistor

Chino-Excel Technology 

CEP1012L/CEB1012L

Electrical Characteristics Tc = 25 C unless otherwise noted

Parameter

Symbol

Test Condition

Min Typ Max Units

4

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Body Leakage Current, Reverse

On Characteristics b

BVDSS

IDSS

IGSSF

IGSSR

VGS = 0V, ID = 250µA

120

VDS = 120V, VGS = 0V

VGS = 20V, VDS = 0V

VGS = -20V, VDS = 0V

V

25

µA

100 nA

-100 nA

Gate Threshold Voltage

Static Drain-Source

On-Resistance

VGS(th)

RDS(on)

VGS = VDS, ID = 250µA

1

VGS = 5V, ID = 10A

3

V

100 120 mΩ

Dynamic Characteristics c

Forward Transconductance

gFS

VDS = 10V, ID = 5A

10

S

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics c

Ciss

Coss

VDS = 25V, VGS = 0V,

f = 1.0 MHz

945

175

pF

pF

Crss

65

pF

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

td(on)

tr

td(off)

VDD = 30V, ID = 15A,

VGS = 5V, RGEN = 20Ω

Turn-Off Fall Time

tf

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Qg

Qgs

VDS = 96V, ID = 10A,

VGS = 5V

Qgd

Drain-Source Diode Characteristics and Maximun Ratings

20

40

ns

26

52

ns

102 204 ns

26

52

ns

38.7 51.5 nC

3.8

nC

8.1

nC

Drain-Source Diode Forward Current

IS

Drain-Source Diode Forward Voltage b

VSD

VGS = 0V, IS = 10A

10

A

1.2

V

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature.

b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.

c.Guaranteed by design, not subject to production testing.

2

Share Link: