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STB7NC80Z-1

N-CHANNEL 800V - 1.3Ω - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH™III MOSFET

STMicroelectronics 

STP7NC80Z - STP7NC80ZFP - STB7NC80Z - STB7NC80Z-1

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS

Drain-source Voltage (VGS = 0)

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

VGS

Gate- source Voltage

ID

Drain Current (continuous) at TC = 25°C

ID

Drain Current (continuous) at TC = 100°C

IDM ( ) Drain Current (pulsed)

PTOT

Total Dissipation at TC = 25°C

Derating Factor

IGS

Gate-source Current

VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ)

dv/dt

Peak Diode Recovery voltage slope

VISO

Insulation Withstand Voltage (DC)

Tstg

Storage Temperature

Tj

Max.Operating Junction Temperature

( ) Pulse width limited by safe operating area

(*) Limited only by maximum temperature allowed

Value

STP7NC80Z

STB7NC80Z

STB7NC80Z-1

STP7NC80ZFP

800

800

±25

6.5

6.5 (*)

4

4(*)

26

26 (*)

135

40

1.08

0.32

±50

3

3

--

2000

-65 to 150

150

THERMAL DATA

Rthj-case

Rthj-amb

Tl

Thermal Resistance Junction-case Max

Thermal Resistance Junction-ambient Max

Maximum Lead Temperature For Soldering Purpose

TO-220 / D2PAK /

I2PAK

0.93

30

300

TO-220FP

3.13

Unit

V

V

V

A

A

A

W

W/°C

mA

KV

V/ns

V

°C

°C

°C/W

°C/W

°C

AVALANCHE CHARACTERISTICS

Symbol

Parameter

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

Max Value

Unit

6.5

A

290

mJ

GATE-SOURCE ZENER DIODE

Symbol

Parameter

BVGSO

Gate-Source Breakdown

Voltage

αT

Voltage Thermal Coefficient

Rz

Dynamic Resistance

Test Conditions

Igs=± 1mA (Open Drain)

T=25°C Note(3)

ID = 20 mA,

Min.

25

Typ.

1.3

90

Max. Unit

V

10-4/°C

Ω

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s

ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be

applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and

cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the

usage of external components.

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