STSJ2NM60 Ver la hoja de datos (PDF) - STMicroelectronics

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componentes Descripción

Fabricante

STSJ2NM60

N-CHANNEL 600V - 2.8Ω - 2A PowerSO-8 Zener-Protected MDmesh™ POWER MOSFET

STMicroelectronics 

STSJ2NM60

THERMAL DATA

Rthj-c Thermal Resistance Junction-case Max

Rthj-amb Thermal Resistance Junction-ambient Max (1)

Tj

Max. Operating Junction Temperature

Tstg

Storage Temperature

1.78

42

150

– 65 to 150

°C/W

°C/W

°C

°C

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

V(BR)DSS Drain-source

ID = 1 mA, VGS = 0

600

V

Breakdown Voltage

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating, TC = 125 °C

1

µA

10

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 20V

±5

µA

ON (1)

Symbol

VGS(th)

RDS(on)

Parameter

Gate Threshold Voltage

Static Drain-source On

Resistance

Test Conditions

VDS = VGS, ID = 250µA

VGS = 10 V, ID = 1 A

Min.

3

Typ.

4

2.8

Max.

5

3.2

Unit

V

Ω

DYNAMIC

Symbol

gfs (4)

Parameter

Forward Transconductance

Ciss

Coss

Crss

RG

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

Gate Input Resistance

Test Conditions

VDS > ID(on) x RDS(on)max,

ID = 2 A

VDS = 25 V, f = 1 MHz, VGS = 0

Min.

f=1 MHz Gate DC Bias = 0

Test Signal Level = 20mV

Open Drain

Typ.

1.4

160

67

4

3.5

Max.

Unit

S

pF

pF

pF

Ω

2/8

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