STU16NB50 Ver la hoja de datos (PDF) - STMicroelectronics
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STU16NB50 Datasheet PDF : 6 Pages
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STU16NB50
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
Pa ram et e r
Turn-on Time
Rise Time
Test Conditions
VDD = 250 V ID = 7.8 A
RG = 4.7 Ω
VGS = 10 V
Min.
T yp.
30
15
Max.
42
21
Unit
ns
ns
Qg
Total Gate Charge
VDD = 400 V ID =15.6 A VGS = 10 V
Q gs Gat e-Source Charge
Qgd Gate-Drain Charge
67
88
nC
20
nC
30
nC
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
Pa ram et e r
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 400 V ID = 15.6 A
RG = 4.7 Ω VGS = 10 V
Min.
T yp.
20
15
35
Max.
26
21
49
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Pa ram et e r
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 15.6 A
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 15.6 A
VDD = 100 V
I R RM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
VGS = 0
di/dt = 100 A/µs
Tj = 150 oC
Min.
T yp.
Max.
15.6
62
Unit
A
A
1.6
V
600
ns
6.8
µC
22.5
A
3/6
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