STP11NC40 Ver la hoja de datos (PDF) - STMicroelectronics
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STP11NC40 Datasheet PDF : 10 Pages
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STP11NC40, STP11NC40FP
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
DYNAMIC
Symbol
Parameter
Test Conditions
Min. Typ. Max.
gfs (1) Forward Transconductance VDS = 15 V, ID = 5 A
8.6
Ciss
Input Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
995
Coss
Output Capacitance
172
Crss
Reverse Transfer
25
Capacitance
SWITCHING ON
Symbol
Parameter
Test Conditions
Min. Typ. Max.
td(on)
Turn-on Delay Time
VDD = 200 V, ID = 5 A
15
tr
Rise Time
RG = 4.7Ω VGS = 10 V
18
(Resistive Load see, Figure 3)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 320V, ID = 10 A,
VGS = 10V
32.5 45.5
6
15
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
td(off)
Turn-off Delay Time
VDD = 320 V, ID = 5 A
43
tf
Fall Time
RG = 4.7Ω VGS = 10 V
15
(Resistive Load see, Figure 3)
tr(Voff)
Off-voltage Rise Time
VDD = 320V, ID = 10 A,
7.5
tf
Fall Time
RG = 4.7Ω, VGS = 10V
14
tc
Cross-over Time
(Inductive Load see, Figure 5)
23
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min. Typ. Max.
ISD
Source-drain Current
9.5
ISDM (2) Source-drain Current (pulsed)
38
VSD (1) Forward On Voltage
ISD = 9.5 A, VGS = 0
1.6
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 9.5 A, di/dt = 100A/µs
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
315
2100
13.6
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Safe Operating Area For TO-220
Safe Operating Area For TO-220FP
Unit
S
pF
pF
pF
Unit
ns
ns
nC
nC
nC
Unit
ns
ns
ns
ns
ns
Unit
A
A
V
ns
nC
A
3/10
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