STS9NF3LL Ver la hoja de datos (PDF) - STMicroelectronics

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Fabricante

STS9NF3LL

N-CHANNEL 30V - 0.016 Ω - 9A SO-8 LOW GATE CHARGE STripFET™ II POWER MOSFET

STMicroelectronics 

STS9NF3LL

THERMAL DATA

Rthj-amb

Tj

Tstg

(*)Thermal Resistance Junction-ambient

Maximum Operating Junction Temperature

Storage Temperature

(*) When mounted on FR-4 board with 0.5 in2 pad of Cu.

Max

50

150

-55 to 150

°C/W

°C

°C

ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

OFF

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

30

V

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating TC = 125°C

1

µA

10

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 16 V

±100

nA

ON (*)

Symbol

VGS(th)

RDS(on)

Parameter

Gate Threshold Voltage

Static Drain-source On

Resistance

Test Conditions

VDS = VGS

ID = 250 µA

VGS = 10 V

VGS = 4.5 V

ID = 4.5 A

ID = 4.5 A

Min.

1

Typ. Max.

0.016 0.019

0.019 0.022

Unit

V

Ω

Ω

DYNAMIC

Symbol

gfs (*)

Ciss

Coss

Crss

Parameter

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

Test Conditions

VDS=15 V

ID = 4 A

VDS = 25V, f = 1 MHz, VGS = 0

Min.

Typ.

12.5

800

250

60

Max.

Unit

S

pF

pF

pF

2/8

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