STD40NE03L Ver la hoja de datos (PDF) - STMicroelectronics
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STD40NE03L Datasheet PDF : 8 Pages
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STD40NE03L
THERMAL DATA
Rth j-pc b Thermal Resistance Junction-PC Board
Max
2. 7
oC/W
Rthj-amb Thermal Resistance Junction-ambient
Max
100
oC/W
Rthj-s ink Thermal Resistance Case-sink
Typ
1. 5
oC/W
Tl
Maximum Lead Temperature F or Soldering Purpose
275
oC
AVALANCHE CHARACTERISTICS
Symbo l
IAR
EAS
P a ra met er
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 15 V)
Max Value
40
100
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)D SS
IDSS
IGSS
P ar am et e r
Test Conditions
Dr ain- s our c e
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rat ing
Drain Current (VGS = 0) VDS = Max Rat ing
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Min.
30
Typ. Max.
1
10
± 100
Unit
V
µA
µA
nA
ON (∗)
Symbo l
VGS(th)
RDS(on)
ID(o n)
P ar am et e r
Test Conditions
Gat e Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10 V ID = 20 A
Resistance
VGS = 5 V ID = 20 A
On State Drain Current VDS > ID(o n) x RDS(on )max
VGS = 10 V
Min.
1
40
Typ.
1.7
0.012
Max.
2.5
0.016
0.022
Unit
V
Ω
Ω
A
DYNAMIC
Symbo l
gfs (∗)
Ciss
Coss
Crss
P ar am et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(o n) x RDS(on )ma x ID = 20 A
Min.
15
Typ.
28
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0 V
2200
pF
570
pF
200
pF
2/8
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