STD40NE03L Ver la hoja de datos (PDF) - STMicroelectronics

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STD40NE03L

N - CHANNEL 30V - 0.012 Ω - 40A TO-252 STripFET™ POWER MOSFET

STMicroelectronics 

®

STD40NE03L

N - CHANNEL 30V - 0.012 Ω - 40A TO-252

STripFET™ POWER MOSFET

TYPE

VDSS

RDS(o n)

ID

STD40NE03L 30 V

< 0.016 Ω

40 A

s TYPICAL RDS(on) = 0.012 Ω

s EXCEPTIONAL dv/dt CAPABILITY

s 100% AVALANCHE TESTED

s LOW GATE CHARGE

s APPLICATION ORIENTED

CHARACTERIZATION

s ADD SUFFIX ”T4” FOR ORDERING IN TAPE

& REEL

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronics unique ”Single Feature

Size™” strip-based process. The resulting transi-

stor shows extremely high packing density for low

on-resistance, rugged avalanche characteristics

and less critical alignment steps therefore a re-

markable manufacturing reproducibility.

APPLICATIONS

s HIGH CURRENT, HIGH SPEED SWITCHING

s SOLENOID AND RELAY DRIVERS

s MOTOR CONTROL, AUDIO AMPLIFIERS

s DC-DC & DC-AC CONVERTERS

3

1

DPAK

TO-252

(Suffix ”T4”)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

S ymb ol

Parameter

VDS

VDGR

Drain-source Voltage (VGS = 0)

Drain- gate Voltage (RGS = 20 kΩ)

VG S

ID

ID

IDM(•)

Ptot

Gate-source Voltage

Drain Current (continuous) at Tc = 25 oC

Drain Current (continuous) at Tc = 100 oC

Drain Current (pulsed)

T otal Dissipation at Tc = 25 oC

Derating Factor

dv/ dt (1) Peak Diode Recovery voltage slope

Tstg Storage Temperature

Tj Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

(**) Value limi ted only by the package

September 1999

Va l u e

30

30

± 20

20**

20**

160

55

0.37

7

-65 to 175

175

( 1) ISD ≤20A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

Unit

V

V

V

A

A

A

W

W /o C

V/ns

oC

oC

1/8

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