STS17NF3LL Ver la hoja de datos (PDF) - STMicroelectronics

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Fabricante

STS17NF3LL

N-channel 30V - 0.0045Ω - 17A - SO-8 STripFET™ II Power MOSFET for DC-DC conversion

STMicroelectronics 

STS17NF3LL

Electrical characteristics

Table 5. Source drain diode

Symbol

Parameter

Test conditions

Min.

ISD

ISDM (1)

Source-drain current

Source-drain current

(pulsed)

VSD (2) Forward on voltage

ISD = 17A, VGS = 0

trr

Qrr

IRRM

Reverse recovery time ISD = 17A, di/dt = 100A/µs,

Reverse recovery charge VDD = 15V; Tj = 150°C

Reverse recovery current (see Figure 15)

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Typ.

39

45

2.3

Max. Unit

17

A

68

A

1.2 V

ns

nC

A

5/12

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