STP6NB25FP Ver la hoja de datos (PDF) - STMicroelectronics
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STP6NB25FP Datasheet PDF : 9 Pages
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ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
td(on)
tr
Turn-on Delay Time
Rise Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
VDD = 125 V, ID = 3 A
RG = 4.7Ω VGS = 10 V
(see test circuit, Figure 3)
VDD = 200V, ID = 6 A,
VGS = 10V
SWITCHING OFF
Symbol
Parameter
tr(Voff)
Off-voltage Rise Time
tf
Fall Time
tc
Cross-over Time
Test Condit ions
VDD = 200V, ID = 6 A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 6 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 6 A, di/dt = 100A/µs,
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
STP6NB25/FP
Min. Typ. Max. Unit
9
ns
9
ns
12
17
nC
7.5
nC
3
nC
Min .
Typ.
8
7
15
Max.
Unit
ns
ns
ns
Min. Typ. Max. Unit
6
A
24
A
1.6
V
160
ns
720
µC
9
A
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
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