STD100N03L-1(2005) Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

STD100N03L-1
(Rev.:2005)

N-CHANNEL 30V - 0.0045Ω - 80A - DPAK - IPAK Planar STripFET™ MOSFET

STMicroelectronics 

2 Electrical characteristics

STD100N03L - STD100N03L-1

Table 7. Source-Drain Diode

Symbol

Parameter

Test Conditions

ISD

Source-Drain Current

ISDMNote 2 Source-Drain Current (pulsed)

VSD Note 4 Forward On Voltage

ISD = 40 A, VGS = 0

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 80 A, di/dt = 100 A/µs

VDD = 25 V, Tj = 150 °C

(see Figure 16)

Min.

Typ.

40

40

2

Max. Unit

80

A

320

A

1.3

V

ns

nC

A

(1) Current limited by package.

(2) Pulse width limited by safe operating area

(3) ISD≤ 80A, di/dt ≤ 360 A/µs, VDS≤ V(BR)DSS, Tj ≤ TjMAX

(4) Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

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