STB70NF02LT4 Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
STB70NF02LT4
STMicroelectronics
STB70NF02LT4 Datasheet PDF : 7 Pages
| |||
STB70NF02L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
td(on)
Turn-on Delay Time
VDD = 10 V
ID = 35 A
480
ns
tr
Rise Time
RG = 4.7 Ω
VGS = 4.5 V
ns
(Resistive Load, Figure 3)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD =16 V ID =46 A VGS =10V
36
45
nC
5
nC
10
nC
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
Test Conditions
VDD = 10 V
ID = 35 A
RG = 4.7Ω,
VGS = 4.5 V
(Resistive Load, Figure 3)
Min.
Typ.
30
110
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
VSD (*) Forward On Voltage
ISD = 70 A
VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ISD = 70 A
di/dt = 100A/µs
VDD = 15 V
Tj = 150°C
(see test circuit, Figure 5)
Min.
Typ.
60
100
2
Max.
70
280
1.2
Unit
A
A
V
ns
nC
A
3/7
Share Link: