FDR6580 Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FDR6580 Datasheet PDF : 5 Pages
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Typical Characteristics
100
VGS = 4.5V
3.0
80
2.5V
60
2.0V
40
20
0
0
0.5
1
1.5
2
2.5
3
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.6
ID = 11.2A
VGS = 4.5V
1.4
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation
withTemperature.
80
VDS = 5V
60
TA = -55oC
25oC
125oC
40
20
0
0.5
1
1.5
2
2.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2
1.8
VGS = 2.0V
1.6
1.4
2.5V
1.2
3.0V
3.5V
4.5V
1
0.8
0
20
40
60
80
100
ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.016
0.014
ID = 5.6A
0.012
0.01
TA = 125oC
0.008
0.006
TA = 25oC
0.004
1
2
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
TA = 125oC
0.1
25oC
0.01
-55oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDR6580 Rev C(W)
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