FDR6580 Ver la hoja de datos (PDF) - Fairchild Semiconductor
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FDR6580 Datasheet PDF : 5 Pages
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July 2001
FDR6580
N-Channel 2.5V Specified PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low RDS(ON) in a small package.
Applications
• Synchronous rectifier
• DC/DC converter
Features
• 11.2 A, 20 V. RDS(ON) = 9 mΩ @ VGS = 4.5 V
RDS(ON) = 11 mΩ @ VGS = 2.5 V
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability in a
smaller footprint than SO8
S
D
D
S
G
D
SuperSOTTM -8
D
D
5
4
6
3
7
2
8
1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDR6580
FDR6580
13’’
Ratings
20
±12
11.2
50
1.8
1.0
0.9
-55 to +150
70
20
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
©2001 Fairchild Semiconductor Corporation
FDR6580 Rev C(W)
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