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Número de pieza
componentes Descripción
D20NF10 Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
D20NF10
N-channel 100V - 0.038Ω - 100A - DPAK Low gate charge STripFET™ II Power MOSFET
STMicroelectronics
D20NF10 Datasheet PDF : 14 Pages
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Electrical characteristics
2
Electrical characteristics
STD20NF10
(T
CASE
=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Drain-source
V
(BR)DSS
breakdown voltage
I
DSS
Zero gate voltage
drain current (V
GS
= 0)
I
GSS
V
GS(th)
R
DS(on)
Gate-body leakage
current (V
DS
= 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
I
D
= 250µA, V
GS
=0
100
V
V
DS
= Max rating
V
DS
= Max rating,
T
C
= 125°C
1
µA
10
µA
V
GS
= ± 20V
±100 nA
V
DS
= V
GS
, I
D
= 250µA
2
3
4
V
V
GS
= 10V, I
D
= 15A
0.038 0.045
Ω
Table 5.
Symbol
Dynamic
Parameter
Test conditions
g
fs
(1)
Forward
transconductance
V
DS
= 15V
,
I
D
= 15A
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 25V, f = 1MHz,
V
GS
= 0
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
DD
= 50V, I
D
= 15A
R
G
= 4.7
Ω
V
GS
= 10V
(see
Figure 14
)
Q
g
Total gate charge
Q
gs
Gate-source charge
Q
gd
Gate-drain charge
V
DD
= 80V, I
D
= 30A,
V
GS
= 10V, R
G
= 4.7
Ω
(see
Figure 15
)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Min. Typ. Max. Unit
10
S
1200
pF
180
pF
80
pF
15
ns
40
ns
45
ns
10
ns
40
55
nC
8
nC
15
nC
4/13
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