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STU7NB100

N - CHANNEL 1000V - 1.2Ω - 7.3A - Max220 PowerMESH™ MOSFET

STMicroelectronics 

®

TYPE

STU7NB100

STU7NB100

N - CHANNEL 1000V - 1.2Ω - 7.3A - Max220

PowerMESH™ MOSFET

VDSS

1000 V

RDS(on)

< 1.5 Ω

ID

7.3 A

PRELIMINARY DATA

s TYPICAL RDS(on) = 1.2 Ω

s EXTREMELY HIGH dv/dt CAPABILITY

s ± 30V GATE TO SOURCE VOLTAGE RATING

s 100% AVALANCHE TESTED

s LOW INTRINSIC CAPACITANCE

s GATE CHARGE MINIMIZED

3

s REDUCED VOLTAGE SPREAD

12

DESCRIPTION

Using the latest high voltage MESH OVERLAY™

process, STMicroelectronics has designed an ad-

vanced family of power MOSFETs with outstand-

ing performances. The new patent pending strip

layout coupled with the Company’s proprietary

edge termination structure, gives the lowest

RDS(on) per area, exceptional avalanche and

dv/dt capabilities and unrivalled gate charge and

switching characteristics.

Max220

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

s HIGH CURRENT, HIGH SPEED SWITCHING

s SWITCH MODE POWER SUPPLY (SMPS)

s DC-AC CONVERTER FOR WELDING

EQUIPMENT AND UNINTERRUPTABLE

POWER SUPPLY AND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS Drain-source Voltage (VGS = 0)

VDGR

VGS

ID

ID

Drain- gate Voltage (RGS = 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at Tc = 25 oC

Drain Current (continuous) at Tc = 100 oC

IDM(•)

Ptot

Drain Current (pulsed)

Total Dissipation at Tc = 25 oC

Derating Factor

dv/dt(1) Peak Diode Recovery voltage slope

Tstg Storage Temperature

Tj

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

March 1999

Value

Unit

1000

V

1000

V

± 30

V

7.3

A

4.7

A

29

A

160

1.28

W

W/oC

4

V/ns

-65 to 150

oC

150

oC

(1) ISD ≤7.3 Α, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

1/5

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